Ultraviolet and deep ultraviolet light emitters and unconventional layer design

Reference Number: K 05-19

Inventors: Nakarmi, M.L.; Lin, J.Y.; Jiang, H.X.

USPTO Link:

Invention Summary

The current state-of-the-art for producing UV and deep UV emission in solid-state devices is the use of A1GaN based quantum wells (QWs) as the active layer. UV emission is this structure is difficult, and light emission obtained through such structures causes the devices to degrade quickly. Research at Kansas State University has let do a structure that is completely different using the new structure is among the best in the world. The structure of the present invention can be extended to obtain emission wavelengths shorter than 280nm.

Advantages

The novel structure of these UV LEDs overcomes the problem of poor conductivity and improves the efficiency of the device. The stability and lifetime of these devices are very good. Preliminary results demonstrate that deep UV LED devices using the new structure are among the best in the world and offer the following advantages:

• Sharp spectral peak profile

• Longer life

• Less power consumption

• Compactness

If compact solid-state UV emitting devices are manufactured, new applications can be developed due to their unique features.

Applications

These efficient solid-state devices have various potential applications such as:

• Biochemical agent detection

• Solid-state lighting

• Water and air purification

• Food processing

• Equipment/personnel decontamination

• Other foreseen medical applications range from:

• Miniaturization of optical spectroscopy systems for non-invasive detection of pre-cancerous cells in optically accessible organs

• Kidney dialysis

• Pharmaceutical production, hospitals, clinics, pathology labs, animal husbandry