Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications

Reference Number: K 02-31

Inventors: Hui, Rongqing; Jiang, Hong-Xing; Lin, Jing-Yu;

USPTO Link: 7345812

Invention Summary

The present application relates to method and apparatus for the use of III-nitride wide band gap semiconductors in optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device is configured for optical communications in an infrared wavelength region. In one further embodiment, the III-nitride semiconductor material is an erbium-doped III-nitride semiconductor material.

In one embodiment, an optical device includes a plurality of waveguides. At least one waveguide of the plurality of waveguides is fabricated using III-nitride semiconductor material. The optical device also includes carrier injection means for electrically adjusting a refractive index of the at least one waveguide.

In one embodiment, an optical wavelength router includes at least one input port having a plurality of independent wavelength channels, a plurality of output ports, and means for routing each wavelength channel of the plurality of independent wavelength channels to a designated output port selected from the plurality of output ports. The means for routing includes one or more optical waveguide devices fabricated using III-nitride material.

In one embodiment, to make an optical waveguide, a heterostructure is formed with at least two III-nitride materials selected for infrared wavelength operations. The heterostructure is provided with electrical contacts for carrier injection. In one further embodiment, the heterostructure is formed with at least two erbium doped III-nitride materials.

In one embodiment, one or more optical waveguide devices fabricated using III-nitride semiconductor material are used for infrared wavelength optical communications. Carrier injection is performed to at least one of the optical waveguide devices to modulate a refractive index of the III-nitride semiconductor material.