Method of nitriding silicon

Reference Number: N 04-12

Inventors: Edler, James P.

Owner: NISTAC

USPTO Link: 6007789

Invention Summary

In accordance with the preferred embodiment of the invention, these and other objects and advantages are addressed as follows. A method of nitriding a silicon-containing material to form a silicon nitride material predominantly in the alpha phase is disclosed which includes (a) heating the silicon-containing material in an atmosphere containing at least hydrogen in the temperature range of from about 0.degree. C. to about 800.degree. C. and (b) thereafter nitriding the silicon-containing material by subjecting the silicon-containing material to a nitriding atmosphere at an elevated temperature to effect nitriding. Nitriding the silicon-containing material is preferably performed by heating the material in an atmosphere containing at least nitrogen in the temperature range of from about 1000.degree. C. to about 1450.degree. C